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DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D088
M3D071
BAS70 series Schottky barrier (double) diodes
Product specification Supersedes data of 1996 Oct 01 1999 Jun 01
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
FEATURES * Low forward current * High breakdown voltage * Guard ring protected * Small plastic SMD package * Low diode capacitance. APPLICATIONS * Ultra high-speed switching * Voltage clamping * Protection circuits. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for stress protection. Single diodes and double diodes with different pinning are available.
Top view
BAS70 series
PINNING DESCRIPTION PIN BAS70 (see Fig.1b) 1 2 3 4 a1 n.c. k1 - SOT23 BAS70-04 (see Fig.1c) a1 k2 k1, a2 - BAS70-05 (see Fig.1d) a1 a2 k1, k2 - BAS70-06 (see Fig.1e) k1 k2 a1, a2 - SOT143B BAS70-07 (see Fig.2) k1 k2 a2 a1
handbook, 2 columns
3
handbook, 2 columns
3 2
MGC485
1
1
2
c. BAS70-04
handbook, 2 columns
MGC482
3 2
MGC484
The diodes BAS70, BAS70-04, BAS70-05 and BAS70-06 are encapsulated in a SOT23 small plastic SMD package. The BAS70-07 is encapsulated in a SOT143B small plastic SMD package. MARKING
a. Simplified outline SOT23.
1
d. BAS70-05.
handbook, 2 columns
3 2 n.c.
MGC483
handbook, 2 columns
3 2
MGC486
1
1
TYPE NUMBER BAS70 BAS70-04 BAS70-05 BAS70-06 BAS70-07 Note
MARKING CODE(1) 73p 74p 75p 76p 77p
b. BAS70 single diode.
e. BAS70-06.
Fig.1 Simplified outline (SOT23) and symbols.
1. = -: Made in Hong Kong. = t: Made in Malaysia.
handbook, halfpage 4
3 4 3
1 1
Top view
2
2
MAM194
Fig.2 Simplified outline (SOT143B) BAS70-07 and symbol.
1999 Jun 01
2
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF IFRM IFSM Tstg Tj Tamb continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp 1 s; 0.5 tp < 10 ms - - - - -65 - -65 PARAMETER CONDITIONS
BAS70 series
MIN.
MAX.
UNIT
70 70 70 100 +150 150 +150
V mA mA mA C C C
ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.3 IF = 1 mA IF = 10 mA IF = 15 mA IR Cd Note 1. Pulse test: tp = 300 s; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT23 or SOT143B standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 500 UNIT K/W reverse current charge carrier life time (Krakauer method) diode capacitance VR = 50 V; note 1; see Fig.4 VR = 70 V; note 1; see Fig.4 IF = 5 mA f = 1 MHz; VR = 0; see Fig.6 410 750 1 100 10 100 2 mV mV V nA A ps pF PARAMETER CONDITIONS MAX. UNIT
1999 Jun 01
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
GRAPHICAL DATA
10 2 IF (mA) 10 1 1 10 1 10 1 (1) 10 2 (2) (3) (4) 10 3 0 20 40
MRA803
BAS70 series
10 2 IR (A) 10 (1)
MRA805
(2)
(3) 10 2
0
0.2
0.4
0.6
0.8 VF (V)
1
60 VR (V)
80
(1) (2) (3) (4)
Tamb = 125 C. Tamb = 85 C. Tamb = 25 C. Tamb = -40 C.
(1) Tamb = 150 C. (2) Tamb = 85 C. (3) Tamb = 25 C.
Fig.3
Forward current as a function of forward voltage; typical values.
Fig.4
Reverse current as a function of reverse voltage; typical values.
103 rdif () 102
MGL762
2 Cd (pF) 1.5
MRA804
1
10 0.5
1 10-1
0 1 10 IF (mA) 102 0 20 40 60 VR (V) 80
f = 10 kHz.
f = 1 MHz.
Fig.5
Differential forward resistance as a function of forward current; typical values.
Fig.6
Diode capacitance as a function of reverse voltage; typical values.
1999 Jun 01
4
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
PACKAGE OUTLINES Plastic surface mounted package; 3 leads
BAS70 series
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Jun 01
5
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS70 series
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y vMA HE
e bp wM B
4
3
Q
A
A1 c
1
b1 e1
2
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT143B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Jun 01
6
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BAS70 series
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Jun 01
7
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 65
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/05/pp8
Date of release: 1999 Jun 01
Document order number:
9397 750 05968

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